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Produttore:
SGS
SGSP579
N-Channel Enhancement MOSFET
V(BR)DSS (V)=500
V(BR)GSS (V)=20
I(D) Abs. Drain Current (A)=12
Absolute Max. Power Diss. (W)=150
@(VDS) (V) (Test Condition)=20
I(DSS) Min. (A)=1.0m
I(GSS) Max. (A)=100n
r(DS)on Max. (Ohms)=1.4
g(fs) Min. (S) Trans. conduct.=5.0
@V(DS) (V) (Test Condition)=25
@I(D) (A) (Test Condition)=4.5
C(iss) Max. (F)=1.9n
t(r) Max. (s) Rise time=60n
t(f) Max. (s) Fall time.=40n
Package=TO-3
Military=N
N-Channel Enhancement MOSFET
V(BR)DSS (V)=500
V(BR)GSS (V)=20
I(D) Abs. Drain Current (A)=12
Absolute Max. Power Diss. (W)=150
@(VDS) (V) (Test Condition)=20
I(DSS) Min. (A)=1.0m
I(GSS) Max. (A)=100n
r(DS)on Max. (Ohms)=1.4
g(fs) Min. (S) Trans. conduct.=5.0
@V(DS) (V) (Test Condition)=25
@I(D) (A) (Test Condition)=4.5
C(iss) Max. (F)=1.9n
t(r) Max. (s) Rise time=60n
t(f) Max. (s) Fall time.=40n
Package=TO-3
Military=N