- Caratteristiche
- Simili
Produttore:
IR
- MOSFET, N, TO-3
- Transistor Polarity:N
- Max Current Id:9A
- Max Voltage Vds:200V
- On State Resistance:0.4ohm
- Rds Measurement Voltage:10V
- Max Voltage Vgs:4V
- Power Dissipation:75W
- Transistor Case Style:TO-3
- No. of Pins:2
- Avalanche Single Pulse Energy Eas:54mJ
- Case Style:TO-3
- Cont Current Id:9A
- Current Iar:9A
- Current Temperature:25°C
- Fixing Centres:30mm
- Full Power Rating Temperature:25°C
- Lead Spacing:11mm
- Max Junction Temperature Tj:150°C
- Max Repetitive Avalanche Energy:7.5mJ
- Max Voltage Vgs th:4V
- Min Junction Temperature, Tj:-55°C
- No. of Transistors:1
- Power Dissipation Pd:75W
- Pulse Current Idm:36A
- Termination Type:Through Hole
- Transistor Type:MOSFET
- Typ Voltage Vds:200V
- Typ Voltage Vgs th:4V
- Voltage Vgs Rds on Measurement:10V
- Weight:0.01kg