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SONY
2SB48
Ge PNP Lo-Pwr BJT
Sony Semiconductor
V(BR)CBO (V)=16
I(C) Abs.(A) Collector Current=100m
Absolute Max. Power Diss. (W)=140m
I(CBO) Max. (A)=16u
h(FE) Min. Static Current Gain=42
@I(C) (A) (Test Condition)=20m
@V(CE) (V) (Test Condition)=1.0
f(T) Min. (Hz) Transition Freq=2.5M
C(obo) (Max) (F)=25p
Ge PNP Lo-Pwr BJT
Sony Semiconductor
V(BR)CBO (V)=16
I(C) Abs.(A) Collector Current=100m
Absolute Max. Power Diss. (W)=140m
I(CBO) Max. (A)=16u
h(FE) Min. Static Current Gain=42
@I(C) (A) (Test Condition)=20m
@V(CE) (V) (Test Condition)=1.0
f(T) Min. (Hz) Transition Freq=2.5M
C(obo) (Max) (F)=25p