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SGS
SGSP532
N-Channel Enhancement MOSFET
V(BR)DSS (V)=350
I(D) Abs. Drain Current (A)=3.0
Absolute Max. Power Diss. (W)=75
r(DS)on Max. (Ohms)=2.5
g(fs) Min. (S) Trans. conduct.=2.0
C(iss) Max. (F)=450p
Package=TO-3
Military=N
N-Channel Enhancement MOSFET
V(BR)DSS (V)=350
I(D) Abs. Drain Current (A)=3.0
Absolute Max. Power Diss. (W)=75
r(DS)on Max. (Ohms)=2.5
g(fs) Min. (S) Trans. conduct.=2.0
C(iss) Max. (F)=450p
Package=TO-3
Military=N