BF195 SI npn 20V 30mA 100MHz

Descrizione

Material of transistor: Si

Polarity: npn

Maximum collector power dissipation (Pc): 250mW

Maximum collector-base voltage (Ucb): 30V

Maximum collector-emitter voltage (Uce): 20V

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 30mA

Maximum junction temperature (Tj): 125°C

Transition frequency (ft): 100MHz

Collector capacitance (Cc), Pf: 1.9

Forward current transfer ratio (hFE), min/max: 36/125

Manufacturer of BF195 transistor: PHILIPS

Package of BF195 transistor: X09

Application of BF195 transistor: RF, Medium Power

Scheda Tecnica