New! BSV12-10 SI pnp 80V 1A 50MHZ TO39 di SIEMENS

Descrizione

Material of transistor: Si

Polarity: pnp

Maximum collector power dissipation (Pc): 5W

Maximum collector-base voltage (Ucb): 90V

Maximum collector-emitter voltage (Uce): 80V

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 1A

Maximum junction temperature (Tj): 200°C

Transition frequency (ft): 50MHz

Collector capacitance (Cc), Pf: 30

Forward current transfer ratio (hFE), min/max: 63/160

Manufacturer of BSV12-10 transistor: SIEMENS

Package of BSV12-10 transistor: TO39

Application of BSV12-10 transistor: Medium Power, Switching, High Frequency

Scheda Tecnica