BD117 Transistor npn Si 60V 5A 30W 50MHz TO3 di SGS

Descrizione

Name: BD117

Material of transistor: Si

Polarity: npn

Maximum collector power dissipation (Pc): 30W

Maximum collector-base voltage (Ucb): 100V

Maximum collector-emitter voltage (Uce): 60V

Maximum emitter-base voltage (Ueb): 5V

Maximum collector current (Ic max): 5A

Maximum junction temperature (Tj): 150°C

Transition frequency (ft): 50MHz

Collector capacitance (Cc), Pf: -

Forward current transfer ratio (hFE), min/max: 30MIN

Manufacturer of BD117 transistor: PHILIPS

Package of BD117 transistor: TO3

Application of BD117 transistor: Power, General Purpose

Scheda Tecnica